The negative charge of the most external PSS layer gives extra electrostatic attraction to positively charged drugs,

such as ATM/ATR signaling pathway Doxorubicin hydrochloride (DOX). DOX is a chemotherapeutic agent widely used 17DMAG purchase in the treatment of a number of tumours, such as breast, lung or ovarian cancers [36, 37]. Its inherent fluorescence gives DOX an additional imaging capability which makes it a remarkable theranostic agent [14, 38–40]. Herein, we present the combination of SiO2 micropillars with PEM coating as an approach to develop new functional materials for sustained release of drug molecules. The hollow micropillars are used as reservoirs for doxorubicin and the PAH/PSS coating as a pH-responsive switch. The polyelectrolyte multilayer on the interior surface prevents the premature release of the drug and enables an enhanced use of the hollow volume by increasing the loading capacity. The effect of the number of PAH/PSS layers in the drug loading and release is also investigated. Methods Materials Hydrofluoric acid (HF, 40%), N,N-dymethylformamide (DMF), buffered hydrofluoric acid (BHF) and tetramethylammonium hydroxide (TMAH, 25%), PAH (Mw 58,000) and PSS (Mw 70,000) were C188-9 manufacturer purchased from Sigma-Aldrich (St. Louis, MO, USA). Acetate buffer (ABS) pH 5.2 and phosphate buffer (PBS)

pH 7.4 solutions were also obtained from Sigma-Aldrich. Doxorubicin hydrochloride was obtained from the European Pharmacopoeia (Strasbourg, France). All other chemicals used in the experiments were obtained from commercial sources as analytical reagents without further purification. Milli-Q water (Millipore, Billerica, MA, USA) with a resistivity of 18.2 MΩ cm was used throughout the study. Boron-doped (p-type) silicon wafers (1 0 0) and resistivity 10 to 20 Ω cm were supplied by Si-Mat (Kaufering, Germany). Fabrication of SiO2 micropillars SiO2 micropillars were fabricated from macroporous silicon produced by electrochemical

Uroporphyrinogen III synthase etching in p-type silicon wafers following the process described elsewhere [10–12]. In order to obtain regular pore arrays, the Si wafer was pre-patterned with a 3-μm lattice using a direct-write lithography system (DWL 66FS, Heidelberg Instruments Gmbh, Heidelberg, Germany). Macropores were formed under galvanostatic conditions (5 mA cm−2) in a solution of 1:10 (v/v) HF (40%wt) to DMF (A in Figure 1). Following, the sample was oxidized at 1,000°C for 1.5 h in air (B in Figure 1). Then, the backside of the wafer was patterned to open windows where the oxide layer was removed by BHF etching (C in Figure 1). Finally, the silicon bulk was anisotropically etched in TMAH (12%, 85°C). As a result, the SiO2 micropillars appear protruding out of the backside of the silicon wafer (D in Figure 1). Figure 1 Schematic of the process for the micropillar fabrication, PEM coating and DOX loading and release.