Here, a slow deposition rate yields a low roughness as well as a formable bond between SiC and metal, which results SC75741 nmr in a high initial Q-factor. The composite layered film is patterned by e-beam lithography after
the application of a PMMA resist (495 KDa). Lift-off follows, and then, the DRIE is implemented to etch away the Si substrate applying predefined parameters in order to fully suspend it without any residues. The fabrication process parameters such as the deposition rates of the materials and working temperature strongly affect the Emricasan stress distributions of nanoresonators as well as the quality factor. Controlling these factors can improve the reliability and sensitivity of the nanoresonator. Figure 1 SEM images of the experimental setup. (a) Experimental setup of resonance detection using a balanced bridge. (b) The equivalent circuit model. (c) Schematic image of the beam with the geometric detail. Table 1 The surface roughness of the resonators and their standard deviation values Factor Resonator R #1 R #2 R #3 R #4 Roughness (nm) 11.2 28.8 0.9 2.4 SD (nm) 5.2 17.3 0.7 1.5 In the setup, the nanoscale doubly clamped resonator is loaded onto a printed circuit board (PCB) XAV-939 concentration and connected to a moderate vacuum chamber at room temperature, which is affected vertically by a magnetic field
(0.9 T). An analog current drive of at least a few tens of microvolts is sent through two ports of the PCB board, which are connected to the beam ends. The electromagnetic field voltage, which is induced by the Lorentzian excitation principles of the resonators, is detected by an amplifier-powered readout port connected to a network analyzer (Agilent E5071C, Agilent Technologies, Inc., Santa Clara, CA, USA), as shown in Figure 2a. Figure 2 Resonance properties of frequency, temperature Evodiamine changes from electrothermal
voltage, and signal-to-noise ratio of resonant frequency. (a) The resonance properties of the electrothermally tuned frequency at various voltages. (b) The temperature changes resulting from the electrothermal voltage. (c) The signal-to-noise ratio as a function of the resonant frequency. Results and discussion The resonant frequency of a doubly clamped beam under thermal stress induced by electrothermal power can be represented as follows [13]: (1) where A is the beam cross-sectional area, L is the length of the beam, ρ is the effective density of the beam, E is the effective Young’s modulus, and T f is the beam tension which is proportional to the temperature change of the beam as below: (2) As presented in the equation, the beam stress is closely related to the resonance frequency and the Q-factor is also affected by changes of the beam stress via electrothermal stress due to critical parameters such as the thermal time constants and thermal conductivity.