In the as-irradiated sample characterized at 300 K, Ga nanocrystals with the diamond structure, which is an unstable configuration for Ga, are directly observed together with nitrogen bubbles in the irradiation-induced amorphous layer. A simple model is proposed to explain Ga nanocrystal formation. Upon thermal annealing, the thickness of the amorphous layer decreases by similar to 13.1% and nanobeam electron diffraction analysis indicates no evidence for residual Ga nanocrystals, but instead reveals a mixture of hexagonal and

cubic GaN phases in the annealed sample. Nitrogen molecules, captured selleckchem in the as-irradiated bubbles, appear to disassociate and react with Ga nanocrystals during the thermal annealing to form crystalline PF-6463922 chemical structure GaN. In addition, electron energy loss

spectroscopy measurements reveal an volume change of 18.9% for the as-irradiated amorphous layer relative to the virgin single crystal GaN. This relative swelling of the damaged layer reduces to 7.7% after thermal annealing. Partial recrystallization and structural relaxation of the GaN amorphous state are believed responsible for the volume change.”
“A magnetic grating with a periodicity of 2 mu m was generated by selective crystallization of an amorphous Cu2MnSn thin film using femtosecond laser pulses. By irradiating the amorphous Cu2MnSn thin film with two-beam interference pattern

of femtosecond laser pulses, alternating bands of ferromagnetic and paramagnetic phases were produced. The crystallized region was composed of ferromagnetic Cu2MnSn grains, whereas the amorphous region remained paramagnetic. Because crystallized Cu2MnSn is the only ferromagnetic phase that can Selleckchem ZD1839 be produced by heat-treatment of the amorphous Cu2MnSn thin film, a magnetic grating with high definition was produced. Moreover, the periodicity of the modulated structure can be reduced down to a submicrometer scale and extended to two dimensions so that the technique could be potentially utilized for magnetic patterning.”
“Fully conjugated and rodlike poly[(1,7-dihydrobenzo[1,2-d_:4,5-d(')]diimidazole-2,6-diyl)-2-(2-sulfo)-p-phenylene] (sPBI) was synthesized and fabricated for monolayer light emitting diodes showing a threshold voltage of 4.5 V and an emission lambda(max) of 530 nm. Intractable sPBI was derivatized for a fully conjugated water soluble rigid-rod polyelectrolyte sPBI-PS(Li+) which was doped with LiCF3SO3 or LiN(CF3SO2)(2) for optical absorption, electrical conductivity, and luminescent emission. sPBI-PS(Li+) light emitting electrochemical cells doped with 0.41 and 1.01 wt % of LiN(CF3SO2)(2) showed a threshold voltage of 2.8 V and a tenfold increase in electroluminescence intensity (at lambda(max)=514 nm) which did not increase with its conductivity.