The extracted ΦB values of these samples are presented in the Fig

The extracted ΦB values of these samples are presented in the Figure 4. The highest ΦB value attained by the NF-��B inhibitor sample annealed in O2 ambient (3.72 eV) was higher than that of metal-organic decomposed CeO2 (1.13 eV) spin-coated on n-type GaN substrate [20]. No ΦB value has been extracted for the sample annealed in N2 ambient due to the low E B and high J of this sample, wherein the gate oxide breaks down prior to the FN tunneling mechanism. Figure 7 Experimental data fitted well with

FN tunneling model. Experimental data (symbol) of samples annealed in O2, Ar (HJQ and KYC, unpublished work), and FG ambient fitted well with FN tunneling model (line). Table 1 compares the computed ΔE c values from the XPS characterization with the ΦB value extracted from the FN tunneling model. From this table, it is distinguished that the E B of the sample annealed in O2 ambient is dominated by the breakdown of IL as check details the obtained

value of ΦB from the FN tunneling model is comparable with the value of ΔE c(IL/GaN) computed from the XPS measurement. For samples annealed in Ar and FG ambient, the buy A-1155463 acquisition of ΦB value that is comparable to the ΔE c(Y2O3/GaN) indicates that the E B of these samples is actually dominated by the breakdown of bulk Y2O3. Since the leakage current of the sample annealed in N2 ambient is not governed by FN tunneling mechanism, a conclusion in determining whether the

E B of this sample is dominated by the breakdown of IL, Y2O3, or a combination of both cannot be deduced. Based on the obtained values of ΔE c(Y2O3/GaN), ΔE c(IL/GaN), and ΔE c(Y2O3/IL), the E B of this sample is unlikely to be dominated by IL due to the acquisition of a negative ΔE c(IL/GaN) value for this sample. Thus, the E B of this sample is most plausible to be dominated by either Y2O3 or a combination of Y2O3 and IL. However, the attainment of ΔE c(Y2O3/IL) value which is larger than that of ΔE c(Y2O3/GaN) value obtained for the samples annealed in Ar and FG ambient eliminates the latter possibility. The reason behind Sirolimus it is if the E B of the sample annealed in N2 ambient is dominated by the combination of Y2O3 and IL, this sample should be able to sustain a higher E B and a lower J than the samples annealed in Ar and FG ambient. Therefore, the E B of the sample annealed in N2 ambient is most likely dominated by the breakdown of bulk Y2O3. Table 1 Comparison of the obtained Δ E c and Φ B values   XPS: conduction band offset     J-E   Y 2 O 3 /GaN IL/GaN Y 2 O 3 /IL Barrier height O2 3.00 3.77 0.77 3.72 Ar 1.55 1.40 0.15 1.58 FG 0.99 0.68 0.31 0.92 N2 0.70 −2.03 2.73 a aNot influenced by FN tunneling. Therefore, barrier height is not extracted from the FN tunneling model.

Comments are closed.